Rasterelektronenmikroskop Jeol JSM 6610LV

Scanning Electron Micrograph JEOL JSM6610LV

Surface technology and surface characterization with regard to forming technologies are in the focus of the PtU’s work. In order to facilitate the research activity on this field, the PtU purchased a Scanning Electron Microscope (SEM) in 2010. Due to the significantly short wave length of an electron beam, microscopic analysis can be acquired at much higher magnification than with regular light microscopes.

Figure 1: Scanning Electron Microscope Jeol JSM 6610LV
Figure 1: Scanning Electron Microscope Jeol JSM 6610LV

The three acquisition modes secondary electron, backscattering compo and backscattering topo enable the plastic illustration of material contrasts and topographies at various intensities. The analysis of nonconductive materials like paper or compound-materials are also possible due to the low vacuum mode.

Figure 2: Images with Elementary Compositions
Figure 2: Images with Elementary Compositions

In addition to the purely microscopic imaging of the samples surface, the elementary composition of the specimen can be analyzed. During the interaction of the electron beam on the surface, energetic specific X-ray-radiation is emitted. Due to that, the elementary composition of the samples’ material surface structures can be gathered by energy-dispersive X-ray spectroscopy (EDX). Furthermore, the surface topography can also be analyzed three dimensional. Due to a digital compilation of two dimensional surface images by a computer program, the topography can be evaluated three dimensional.

Figure 3: Quantitative Topographic Analysis
Figure 3: Quantitative Topographic Analysis

Technical data:

  • magnification: 5x – 300.000x
  • resolution (SE): 3 nm (30 kV)
  • resolution (LV): 4 nm (30 kV)
  • traverse paths:
    x = 120 mm
    y = 100 mm
    z = 80 mm
    t = -10° – 90°
    r = 360° endless